Poisson Ratio and Biaxial Relaxation Coefficient in InxGa1-xN and InxAl1-xN Alloys
نویسندگان
چکیده
منابع مشابه
Distribution of cations in wurtzitic InxGa1−xN and InxAl1−xN alloys: Consequences for energetics and quasiparticle electronic structures
Luiz Cláudio de Carvalho,1,2,* André Schleife,1,2,3 Jürgen Furthmüller,1,2 and Friedhelm Bechstedt1,2 1Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, D-07743 Jena, Germany 2European Theoretical Spectroscopy Facility (ETSF) 3Condensed Matter and Materials Division, Lawrence Livermore National Laboratory, Livermore, California 94550, USA (Received 15 ...
متن کاملAb initio calculation of optical properties with excitonic effects in wurtzite InxGa1−xN and InxAl1−xN alloys
Luiz Cláudio de Carvalho,1,2,* André Schleife,2,3 Jürgen Furthmüller,1,2 and Friedhelm Bechstedt1,2 1Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena, Germany 2European Theoretical Spectroscopy Facility (ETSF) 3Condensed Matter and Materials Division, Lawrence Livermore National Laboratory, Livermore, California 94550, USA (Received 18 Sept...
متن کاملOrigin of background electron concentration in InxGa1−xN alloys
The origin of high background electron concentration (n) in InxGa1−xN alloys has been investigated. A shallow donor was identified as having an energy level (ED1) that decreases with x (ED1 = 16 meV at x = 0 and ED1 = 0 eV at x ∼ 0.5) and that crossover the conduction band at x ∼ 0.5. This shallow donor is believed to be the most probable cause of high n in InGaN. This understanding is consiste...
متن کاملStudy of High Indium InXGa1-XN Alloys with Synchrotron Radiation
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapphire (0001) by molecular beam epitaxy (MBE). X-ray absorption fine structure have been used to study the local structure of some typical InxGa1-xN alloys with high indium (In) composition of x=0.78 and 0.86. A detailed analysis of the extended x-ray absorption fine structure of In K-edge by using ...
متن کاملCompositional Modulation in InxGa1-xN
Transmission Electron Microscopy and x-ray diffraction were used to study compositional modulation in InxGa1-x N layers grown with compositions close to the miscibility gap. The samples (0.34 < x < 0.8) were deposited by molecular beam epitaxy using either a 200-nm-thick AlN or GaN buffer layer grown on a sapphire substrate. In the TEM imaging mode this modulation is seen as black/white fringes...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2011
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.120.902